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Ultraviolet exposure enhanced silicon direct bonding

Guanglan LIAO, Xuekun ZHANG, Xiaohui LIN, Canghai MA, Lei NIE, Tielin SHI,

《机械工程前沿（英文）》 2010年第5卷第1期页码 87-92 doi: 10.1007/s11465-009-0078-x

摘要： Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding.

关键词： ultraviolet (UV) exposure silicon direct bonding bonding strength reliability

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用于微电子机械系统封装的体硅键合技术和薄膜密封技术

王渭源,王跃林

《中国工程科学》 2002年第4卷第6期页码 56-62

摘要：

对静电键合、体硅直接键合和界面层辅助键合等三种体硅键合技术，整片操作、局部操作和选择保护等三种密封技术，以及这些技术用于微电子机械系统的密封作了评述，强调在器件研究开始时应考虑封装问题，具体技术则应在保证器件功能和尽量减少芯片复杂性两者之间权衡决定。

关键词：体硅键合技术薄膜密封技术微电子机械系统封装技术

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提高硅微谐振系统性能的一项有效措施

夏敦柱,王寿荣,周百令

《中国工程科学》 2006年第8卷第10期页码 71-74

摘要：

介绍了硅微谐振器系统的工作原理，重点给出了一种基于新型的DDS器件AD9954的智能谐振系统设计与实现。详细分析了AD9954作为智能精密驱动源的粗细搜索两种阶段工作流程并给出与DSP器件的数字接口技术。结合实验数据和扫频曲线，得出在不同真空度环境下谐振器的两种扫频结果，并对谐振系统的工作情况给予评价。

关键词：直接数字合成(DDS) 硅微谐振器 AD9954 数字信号处理(DSP)

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The electrostatic-alloy bonding technique used in MEMS

WANG Wei, CHEN Wei-ping

《机械工程前沿（英文）》 2006年第1卷第2期页码 238-241 doi: 10.1007/s11465-006-0011-5

摘要： Electrostatic-alloy bonding of silicon wafer with glass deposited by Au to form Si/Au-glass water, and bonding of Si/Au-glass with silicon wafer were researched during fabrication of pressure sensors. The silicon wafer and glass wafer with an Au film resistor were bonded by electrostatic bonding, and then Si-Au alloy bonding was formed by annealing at 400vH for 2 h. The air sealability of the cavity after bonding was finally tested using the N filling method. The results indicate that large bond strength was obtained at the bonding interface. This process was used in fabricating a pressure sensor with a sandwich structure. The results indicate that the sensor presented better performances and that the bonding techniques can be used in MEMS packaging.

关键词： Si/Au-glass strength MEMS packaging process sandwich structure

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Patterned wafer bonding using ultraviolet adhesive

Rui ZHUO, Guanglan LIAO, Wenliang LIU, Lei NIE, Tielin SHI

《机械工程前沿（英文）》 2011年第6卷第2期页码 214-218 doi: 10.1007/s11465-011-0130-5

摘要：

The process of patterned wafer bonding using ultraviolet (UV) adhesive as the intermediate layer was studied. By presetting the UV adhesive guide-layer, controlling the thickness of the intermediate layer (1– 1.5 μm), appropriate pre-drying temperature (60°C), and predrying time (6 min), we obtained the intermediate layer bonding of patterned quartz/quartz. Experimental results indicate that patterned wafer bonding using UV adhesive is achieved under room temperature. The process also has advantages of easy operation, low cost, and no plugging or leakage in the patterned area after bonding. Using the process, a microfluidic chip for red blood cell counting was designed and fabricated. Patterned wafer bonding using UV adhesive will have great potential in the fabrication of microfluidic chips.

关键词： ultraviolet (UV) adhesive intermediate layer patterned wafer bonding

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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

《环境科学与工程前沿（英文）》 2015年第9卷第5期页码 905-911 doi: 10.1007/s11783-015-0786-x

摘要： The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity, uptake, translocation, and accumulation in the rice cultivars Yangdao 6 and Yu 44 grown in soil containing two different Pb levels (500 mg·kg and 1000 mg·kg ). The results showed that Si application alleviated the toxic effects of Pb on rice growth. Under soil Pb treatments of 500 and 1000 mg·kg , the biomasses of plants supplied with common Si and nano-Si were 1.8%–5.2% and 3.3%–11.8% higher, respectively, than those of plants with no Si supply (control). Compared to the control, Pb concentrations in rice shoots supplied with common Si and nano-Si were reduced by 14.3%–31.4% and 27.6%–54.0%, respectively. Pb concentrations in rice grains treated with common Si and nano-Si decreased by 21.3%–40.9% and 38.6%–64.8%, respectively. Pb translocation factors (TFs) from roots to shoots decreased by 15.0%–29.3% and 25.6%–50.8%, respectively. The TFs from shoots to grains reduced by 8.3%–13.7% and 15.3%–21.1%, respectively, after Si application. The magnitudes of the effects observed on plants decreased in the following order: nano-Si treatment>common Si treatment and high-grain-Pb-accumulating cultivar (Yangdao 6)>low-grain-Pb-accumulating cultivar (Yu 44) and heavy Pb stress (1000 mg·kg )>moderate Pb stress (500 mg·kg )>no Pb treatment. The results of the study indicate that nano-Si is more efficient than common Si in ameliorating the toxic effects of Pb on rice growth, preventing Pb transfer from rice roots to aboveground parts, and blocking Pb accumulation in rice grains, especially in high-Pb-accumulating rice cultivars and in heavily Pb-polluted soils.

关键词： silicon (Si) lead (Pb) rice (Oryza sativa L.) toxicity accumulation

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A space solar cell bonding robot

FU Zhuang, ZHAO Yan-zheng, LIU Ren-qiang, DONG Zhi

《机械工程前沿（英文）》 2006年第1卷第3期页码 360-363 doi: 10.1007/s11465-006-0027-x

摘要： A space solar cell bonding robot system which consists of a three-axis Cartesian coordinate s robot, coating device, bonding device, orientation plate, and control subsystem was studied. A method, which can control the thickness o

关键词： Cartesian coordinate thickness three-axis Cartesian orientation control subsystem

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淀粉基API胶合木胶接结构破坏模式及失效机理

时君友,徐文彪,王淑敏

《中国工程科学》 2014年第16卷第4期页码 40-44

摘要：

以淀粉基水性高分子异氰酸酯（API）胶合木胶接结构为研究对象，以胶接的压缩剪切强度为评估指标，通过加速湿热老化试验对胶接结构的破坏模式和失效机理进行了研究。结果表明：胶接结构的断裂性质为韧性断裂，且随着老化时间的增加，其破坏模式为由内聚破坏向内聚破坏+界面破坏转变。在湿热老化试验前期温度对压缩剪切试样性能起主要作用，在老化后期湿度起主要作用。

关键词：胶接结构加速湿热老化断裂性质破坏模式

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

《能源前沿（英文）》 2011年第5卷第3期页码 305-312 doi: 10.1007/s11708-011-0155-9

摘要： A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

关键词： computer modeling silicon crystal growth solar cells

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

《机械工程前沿（英文）》 2021年第16卷第3期页码 570-579 doi: 10.1007/s11465-021-0642-6

摘要： The interfacial wear between silicon and amorphous silica in water environment is critical in numerous applications. However, the understanding regarding the micro dynamic process is still unclear due to the limitations of apparatus. Herein, reactive force field simulations are utilized to study the interfacial process between silicon and amorphous silica in water environment, exploring the removal and damage mechanism caused by pressure, velocity, and humidity. Moreover, the reasons for high removal rate under high pressure and high velocity are elucidated from an atomic perspective. Simulation results show that the substrate is highly passivated under high humidity, and the passivation layer could alleviate the contact between the abrasive and the substrate, thus reducing the damage and wear. In addition to more Si-O-Si bridge bonds formed between the abrasive and the substrate, new removal pathways such as multibridge bonds and chain removal appear under high pressure, which cause higher removal rate and severer damage. At a higher velocity, the abrasive can induce extended tribochemical reactions and form more interfacial Si-O-Si bridge bonds, hence increasing removal rate. These results reveal the internal cause of the discrepancy in damage and removal rate under different conditions from an atomic level.

关键词： silicon ReaxFF molecular dynamics friction damage

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

《机械工程前沿（英文）》 2007年第2卷第1期页码 120-124 doi: 10.1007/s11465-007-0021-y

摘要： Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flight industry. Al-30Si and Al-40Si are fabricated with air-atomization and vacuum-canning hot-extrusion process. The density, thermal conductivity, hermeticity and thermal expansion coefficients of the material are measured, and the relationship between extrusion temperature and properties is obtained. Experimental results show that the density of high-silicon aluminum alloys prepared with this method is as high as 99.64% of the theory density, and increases with elevating extrusion temperature. At the same time, thermal conductivity varies between 104-140 W/(m " K); with the extrusion temperature, thermal expansion coefficient also increases but within 13?10 (at 100?C) and hermeticity of the material is high to 10 order of magnitude.

关键词： coefficient hermeticity temperature relationship air-atomization

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硅及硅基半导体材料中杂质缺陷和表面的研究

屠海令

《中国工程科学》 2000年第2卷第1期页码 7-17

摘要：

随着超大规模集成电路设计线宽向深亚微米级（＜0.5μm）和亚四分之一微米级（＜0.25μm）发展，对半导体硅片及其它硅基材料的质量要求越来越高，研究上述材料中各种杂质的行为，控制缺陷类型及数量，提高晶体完整性，降低表面污染和采用缺陷工程的方法改善材料质量显得尤为重要。文章阐述了深亚微米级和亚四分之一微米级集成电路用大直径硅材料中铁、铜金属和氧、氢、氮非金属杂质元素的行为，点缺陷及其衍生缺陷的本质与控制方法，硅片表面形貌、表面污染与检测方法的研究热点。同时还介绍了外延硅、锗硅及绝缘体上硅（SOI）等硅基材料的特性、制备及工艺技术发展趋势，展望了跨世纪期间硅及硅基材料产业发展的技术经济前景。

关键词：硅片硅外延片锗硅绝缘体上硅杂质行为缺陷控制表面质量

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Additive direct-write microfabrication for MEMS: A review

Kwok Siong TEH

《机械工程前沿（英文）》 2017年第12卷第4期页码 490-509 doi: 10.1007/s11465-017-0484-4

摘要：

Direct-write additive manufacturing refers to a rich and growing repertoire of well-established fabrication techniques that builds solid objects directly from computer-generated solid models without elaborate intermediate fabrication steps. At the macroscale, direct-write techniques such as stereolithography, selective laser sintering, fused deposition modeling ink-jet printing, and laminated object manufacturing have significantly reduced concept-to-product lead time, enabled complex geometries, and importantly, has led to the renaissance in fabrication known as the . The technological premises of all direct-write additive manufacturing are identical—converting computer generated three-dimensional models into layers of two-dimensional planes or slices, which are then reconstructed sequentially into three-dimensional solid objects in a layer-by-layer format. The key differences between the various additive manufacturing techniques are the means of creating the finished layers and the ancillary processes that accompany them. While still at its infancy, direct-write additive manufacturing techniques at the microscale have the potential to significantly lower the barrier-of-entry—in terms of cost, time and training—for the prototyping and fabrication of MEMS parts that have larger dimensions, high aspect ratios, and complex shapes. In recent years, significant advancements in materials chemistry, laser technology, heat and fluid modeling, and control systems have enabled additive manufacturing to achieve higher resolutions at the micrometer and nanometer length scales to be a viable technology for MEMS fabrication. Compared to traditional MEMS processes that rely heavily on expensive equipment and time-consuming steps, direct-write additive manufacturing techniques allow for rapid design-to-prototype realization by limiting or circumventing the need for cleanrooms, photolithography and extensive training. With current direct-write additive manufacturing technologies, it is possible to fabricate unsophisticated micrometer scale structures at adequate resolutions and precisions using materials that range from polymers, metals, ceramics, to composites. In both academia and industry, direct-write additive manufacturing offers extraordinary promises to revolutionize research and development in microfabrication and MEMS technologies. Importantly, direct-write additive manufacturing could appreciably augment current MEMS fabrication technologies, enable faster design-to-product cycle, empower new paradigms in MEMS designs, and critically, encourage wider participation in MEMS research at institutions or for individuals with limited or no access to cleanroom facilities. This article aims to provide a limited review of the current landscape of direct-write additive manufacturing techniques that are potentially applicable for MEMS microfabrication.

关键词： direct-write additive manufacturing microfabrication MEMS

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Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

《能源前沿（英文）》 2017年第11卷第1期页码 23-31 doi: 10.1007/s11708-016-0441-7

摘要： One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry highly reliant on heavily doped phosphorus diffusions as a source of gettering, the transition to selective emitter structures would require new alternative methods of impurity extraction. In this paper, a novel laser based method for gettering is investigated for its impact on commercially available silicon wafers used in the manufacturing of solar cells. Direct comparisons between laser enhanced gettering (LasEG) and lightly-doped emitter diffusion gettering demonstrate a 45% absolute improvement in bulk minority carrier lifetime when using the laser process. Although grain boundaries can be effective gettering sites in multicrystalline wafers, laser processing can substantially improve the performance of both grain boundary sites and intra-grain regions. This improvement is correlated with a factor of 6 further decrease in interstitial iron concentrations. The removal of such impurities from multicrystalline wafers using the laser process can result in intra-grain enhancements in implied open-circuit voltage of up to 40 mV. In instances where specific dopant profiles are required for a diffusion on one surface of a solar cell, and the diffusion process does not enable effective gettering, LasEG may enable improved gettering during the diffusion process.

关键词： gettering multicystaline silicon impurities laser doping